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Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation 1994 Phys. Rev. B Condens. Matter. 49 9091-9096 details   doi
Tikhonov, V. V.; Polyakova, O. N.; Gol’tsman, G. N.; Dzardanov, A. L.; Boyarskiy, D. A. Determination of dielectric properties of ore minerals in the microwave band 2008 Radiophys. Quant. Electron. 51 966-974 details   doi
Semenov, A. D.; Gol’tsman, G. N. Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector 2000 J. Appl. Phys. 87 502-510 details   doi
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse 1995 J. Appl. Phys. 77 4064-4070 details   doi
Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films 1994 J. Appl. Phys. 76 1902-1909 details   doi
Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation 1992 J. Appl. Phys. 72 5496-5499 details   doi
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. Generation of nanosecond terahertz pulses by the optical rectification method 2012 JETP Lett. 96 94-97 details   doi
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
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