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Kooi, J. W., Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Dieleman, P., et al. (2007). IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys., 101(4), 044511.
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Baselmans, J. J. A., Baryshev, A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2006). Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers. J. Appl. Phys., 100(8), 084510 (1 to 7).
Abstract: We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K
load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain.
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Kooi, J. W., Baselmans, J. J. A., Baryshev, A., Schieder, R., Hajenius, M., Gao, J. R., et al. (2006). Stability of heterodyne terahertz receivers. J. Appl. Phys., 100(6), 064904 (1 to 9).
Abstract: In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies.
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Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz. Supercond. Sci. Technol., 17(5), S224–S228.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.
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Yang, Z. Q., Hajenius, M., Baselmans, J. J. A., Gao, J. R., Voronov, B., & Gol’tsman, G. N. (2006). Reduced noise in NbN hot-electron bolometer mixers by annealing. Supercond. Sci. Technol., 19(4), L (9 to 12).
Abstract: We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometers (HEBs) increases by 25–30% after annealing at 85 °C in vacuum. The devices studied are twin-slot antenna coupled mixers with a small NbN bridge of 1 × 0.15 µm2. We show that annealing changes the device properties as reflected in sharper resistive transitions of the complete device, apparently reducing the device-related noise. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K.
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