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Author Title Year Publication Volume Pages
Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. Optical single photon detection in micron-scaled NbN bridges 2018 arXiv
Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers 2018 Proc. 29th Int. Symp. Space Terahertz Technol. 113
Sych, Denis; Shcherbatenko, Michael; Elezov, Michael; Goltsman, Gregory N. Towards the improvement of the heterodyne receiver sensitivity beyond the quantum noise limit 2018 Proc. 29th Int. Symp. Space Terahertz Technol. 245-247
Iomdina, E. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A.; Goltsman, G. N. Terahertz scanning for evaluation of corneal and scleral hydration 2018 Sovremennye tehnologii v medicine 10 143-149
Goltsman, G. Superconducting thin film as infrared heterodyne and direct detectors 2017 16th ISEC 1-3
Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. Physics and operation of superconducting single-photon devices 2017 Superconductors at the Nanoscale 279-308
Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. Spectrally resolved single-photon imaging with hybrid superconducting – nanophotonic circuits 2016 arXiv 1-20
Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. Attojoule energy resolution of direct detector based on hot electron bolometer 2016 J. Phys.: Conf. Ser. 741 012165 (1 to 5)
Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. Quasi-1-dimensional superconductivity in highly disordered NbN nanowires 2016 arXiv
Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. Electron-phonon relaxation time in ultrathin tungsten silicon film 2018 arXiv