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Dieleman, P. (1998). Fundamental limitations of THz niobium and niobiumnitride SIS mixers. Ph.D. thesis, , Rijksuniversiteit, Groningen.
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Murk, A., Kämpfer, N., Wylde, R., Inatani, J., Manabe, T., & Seta, M. (2001). Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 426–435).
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Finkel, M., Vachtomin, Y., Antipov, S., Drakinski, V., Kaurova, N., Voronov, B., et al. (2003). Gain bandwidth and noise temperature of NbTiN HEB mixer. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 276–285).
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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Semenov, A., Il'yin, K., Siegel, M., Smirnov, A., Pavlov, S., Richter, H., et al. (2006). Intermediate frequency bandwidth of a hot-electron mixer: Comparision with bolometric models. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 73–76). Paris, France.
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Steier, W. H., Oh, M. C., Zhang, C., Zhang, H., Szep, A., Fetterman, H. R., et al. (2008). Electro-optic polymers and applications in next generation phase array antennas.
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