| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. |
| Title |
Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials |
Type |
Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
6 |
Pages |
1129-1140 |
| Keywords |
IR HEB detectors |
| Abstract |
Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response. |
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| Language |
Russian |
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ISSN  |
0131-5366 |
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no |
| Call Number |
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Serial |
1673 |
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| Author |
Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. |
| Title |
Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector |
Type |
Journal Article |
| Year |
1991 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
80 |
Issue |
7 |
Pages |
503-506 |
| Keywords |
Nb detector, applications |
| Abstract |
We studied the far-infrared emission characteristics of a cyclotron p-germanium laser using a broad-band superconducting Nb film detector. For magnetic fields between ∼25 kOe and ∼50 kOe, emission in a frequency range from ∼50 cm-1 to ∼100 cm-1 with maximum intensity around 90 cm-1 was obtained. We determined, for fixed magnetic fields, electric field dependences of the emission intensity taking into account that the total electric field is a sum of the applied and the Hall electric field. An analysis of the emission intensity characteristic gives evidence that transitions between the two lowest Landau levels of light holes are responsible for the laser action. |
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| ISSN |
0038-1098 |
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no |
| Call Number |
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Serial |
1677 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
Type |
Journal Article |
| Year |
1990 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
76 |
Issue |
4 |
Pages |
493-497 |
| Keywords |
YBCO HTS detectors |
| Abstract |
The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable. |
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| ISSN |
0038-1098 |
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no |
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Serial |
1685 |
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| Author |
Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
| Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
Type |
Journal Article |
| Year |
2015 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
118 |
Issue |
19 |
Pages |
194303 |
| Keywords |
terahertz detectors, asymmetric carbon nanotubes, CNT |
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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| ISSN |
0021-8979 |
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no |
| Call Number |
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Serial |
1169 |
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| Author |
Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
76 |
Issue |
3 |
Pages |
1902-1909 |
| Keywords |
YBCO HTS HEB detector, nonequilibrium response |
| Abstract |
Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response. |
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0021-8979 |
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no |
| Call Number |
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Serial |
1637 |
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