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Citations
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1973). Submillimeter spectroscopy of semiconductors. Sov. Phys. JETP, 37(2), 299–304.
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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Gershenzon, E. M., & Gol'tsman, G. N. (1971). Transitions of electrons between excited states of donors in germanium. JETP Lett., 14(2), 63–65.
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Gershenzon, E. M., Gol'tsman, G. N., Emtsev, V. V., Mashovets, T. V., Ptitsyna, N. G., & Ryvkin, S. M. (1971). Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett., 14(6), 241.
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Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1975). Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons. Sov. Phys. JETP, 40(2), 311–315.
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