|
Author |
Title |
Year |
Publication |
DOI |
Links |
|
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
10.1016/j.mee.2018.03.008 |
|
|
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
2003 |
Microelectronic Engineering |
10.1016/S0167-9317(03)00309-5 |
|
|
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
2003 |
Phys. Rev. B |
10.1103/PhysRevB.67.132508 |
|
|
Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
1998 |
Phys. Rev. B |
10.1103/PhysRevB.57.15623 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
10.1103/physrevb.53.r7592 |
|