| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. |
S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation |
1992 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
5 |
2386-2402 |
| Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. |
Increase of reproducibility in production of superconducting thin films of niobium nitride |
1992 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
5 |
1950-1954 |
| Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I. |
Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting |
2021 |
Opt. Lett. |
46 |
1217-1220 |
| Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. |
Single photon detection system for visible and infrared spectrum range |
2018 |
Opt. Lett. |
43 |
6085-6088 |
| Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
1993 |
Opt. Lett. |
18 |
96-97 |
| Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. |
Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion |
2019 |
Opt. Lett. |
44 |
1198-1201 |
| Sergeev, A.; Mitin, V. |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
2000 |
Phys. Rev. B. |
61 |
6041-6047 |
| Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
2003 |
Phys. Rev. B |
67 |
132508 (1 to 4) |
| Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
1998 |
Phys. Rev. B |
57 |
15623-15628 |
| Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
| Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation |
1994 |
Phys. Rev. B Condens. Matter. |
49 |
9091-9096 |
| Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
| Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
| Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
2003 |
Microelectronic Engineering |
69 |
274-278 |
| Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
Nano-structured superconducting single-photon detectors |
2004 |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
520 |
527-529 |
