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Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion 2019 Opt. Lett. 44 1198-1201 details   doi
Sergeev, A.; Mitin, V. Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials 2000 Phys. Rev. B. 61 6041-6047 details   doi
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. Time delay of resistive-state formation in superconducting stripes excited by single optical photons 2003 Phys. Rev. B 67 132508 (1 to 4) details   doi
Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films 1998 Phys. Rev. B 57 15623-15628 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time 1996 Phys. Rev. B Condens. Matter. 53 R7592-R7595 details   doi
Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation 1994 Phys. Rev. B Condens. Matter. 49 9091-9096 details   doi
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 56 10089-10096 details   doi
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 195 26-31 details   doi
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits 2003 Microelectronic Engineering 69 274-278 details   doi
Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. Nano-structured superconducting single-photon detectors 2004 Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 520 527-529 details   doi
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