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Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect 2001 J. Vac. Sci. Technol. B 19 2766-2769 details   doi
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 195 26-31 details   doi
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits 2003 Microelectronic Engineering 69 274-278 details   doi
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. Time delay of resistive-state formation in superconducting stripes excited by single optical photons 2003 Phys. Rev. B 67 132508 (1 to 4) details   doi
Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films 1998 Phys. Rev. B 57 15623-15628 details   doi
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