| |
Records |
Links |
|
Author |
Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
|
| |
Title |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
Type |
Journal Article |
| |
Year |
2020 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
|
| |
Volume |
10 |
Issue |
1 |
Pages |
16819 |
|
| |
Keywords |
VN HEB |
|
| |
Abstract |
The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
|
| |
Address |
National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN  |
2045-2322 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
PMID:33033360; PMCID:PMC7546726 |
Approved |
no |
|
| |
Call Number |
|
Serial |
1797 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
|
| |
Title |
High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
Type |
Journal Article |
| |
Year |
2012 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
|
| |
Volume |
3 |
Issue |
|
Pages |
1325 (1 to 10) |
|
| |
Keywords |
waveguide SSPD |
|
| |
Abstract |
Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
|
| |
Address |
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2041-1723 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
PMID:23271658; PMCID:PMC3535416 |
Approved |
no |
|
| |
Call Number |
|
Serial |
1375 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
|
| |
Title |
Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
Type |
Journal Article |
| |
Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
|
| |
Volume |
27 |
Issue |
2 |
Pages |
1317-1320 |
|
| |
Keywords |
YBCO, HTS, Nb HEB mixers |
|
| |
Abstract |
A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1941-0069 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1681 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
|
| |
Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
Type |
Journal Article |
| |
Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
|
| |
Volume |
27 |
Issue |
2 |
Pages |
1321-1324 |
|
| |
Keywords |
YBCO HTS detectors |
|
| |
Abstract |
Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1941-0069 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1679 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A. |
|
| |
Title |
Ultrafast superconductive switch |
Type |
Journal Article |
| |
Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
|
| |
Volume |
27 |
Issue |
2 |
Pages |
2844-2846 |
|
| |
Keywords |
Nb superconducting switch |
|
| |
Abstract |
The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1941-0069 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1680 |
|
| Permanent link to this record |
