Author |
Title |
Year |
Publication |
Volume |
Pages |
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
1990 |
Solid State Communications |
76 |
493-497 |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
1990 |
Solid State Communications |
75 |
639-641 |
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. |
Submillimeter backward wave tube spectrometer for measuring superconducting film transmission |
1983 |
Pribory i Tekhnika Eksperimenta |
26 |
134-137 |
Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
Design and performance of the lattice-cooled hot-electron terahertz mixer |
2000 |
J. Appl. Phys. |
88 |
6758-6767 |
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse |
1995 |
J. Appl. Phys. |
77 |
4064-4070 |
Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films |
1994 |
J. Appl. Phys. |
76 |
1902-1909 |
Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation |
1992 |
J. Appl. Phys. |
72 |
5496-5499 |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
2001 |
Jetp Lett. |
73 |
44-47 |