Zhang, J., Słysz, W., Pearlman, A., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys. Rev. B, 67(13), 132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Korneev, A., Lipatov, A., Okunev, O., Chulkova, G., Smirnov, K., Gol’tsman, G., et al. (2003). GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering, 69(2-4), 274–278.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Aberle, N., & Witte, U. (2003). Deep-sea macrofauna exposed to a simulated sedimentation event in the abyssal NE Atlantic: in situ pulse-chase experiments using 13C-labelled phytodetritus. Mar Ecol Prog Ser, 251, 37–47.
Abstract: Tracer experiments with 13C-labelled diatoms Thalassiosira rotula (Bacillariophycea, 98% 13C-labelled) were conducted at the Porcupine Abyssal Plain (PAP) in the NE Atlantic (BENGAL Station; 48<b0>50'N, 16<b0>30'W, 4850 m depth) during May/June 2000. In situ enrichment experiments were carried out using deep-sea benthic chamber landers: within the chambers a spring bloom was simulated and the fate of this food-pulse within the abyssal macrobenthic community was followed. In focus was the role of different macrofauna taxa and their vertical distribution within the sediment column in consuming and reworking the freshly deposited material. T. rotula is one of the most abundant pelagic diatoms in the NE Atlantic and therefore 0.2 g of freeze dried T. rotula, equivalent to 1 g algal C m-2 yr-1, was injected into each incubation chamber. Three different incubation times of 2.5, 8 and 23 d were chosen in order to follow the uptake of 13C-labelled phytodetritus by macrofauna. After only 2.5 d, 77% of all macrofauna organisms showed tracer uptake. After 23 d the highest degree of enrichment was measured and 95% of the individuals had taken up 13C from the introduced algal material. In addition to that a downward transport of organic matter was observed, even though the mixing was not very intense. The initial processing of carbon was dominated by polychaetes that made up a percentage of 52% of total macrofauna. In general macrofauna organisms that lived close to the sediment surface had higher access to the simulated food-pulse, confirming the hypothesis that individuals close to the sediment surface have the strongest impact on the decomposition of phytodetritus. In our study we observed only modest vertical entrainment of 13C tracers into the sediment. With regard to contradictory results from former 13C-enrichment experiments in bathyal regions, compared to results from our study site in the abyssal plain, we thus propose pronounced differences in feeding strategies between macrofauna communities from continental margins and abyssal plains.
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Sobolewski, R., Verevkin, A., Gol'tsman, G. N., Lipatov, A., & Wilsher, K. (2003). Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond., 13(2), 1151–1157.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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