| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
Stability of heterodyne terahertz receivers |
2006 |
J. Appl. Phys. |
100 |
064904 (1 to 9) |
|
|
|
Semenov, A. D.; Gol’tsman, G. N. |
Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
2000 |
J. Appl. Phys. |
87 |
502-510 |
|
|
|
Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. |
Performance of NbN lattice‐cooled hot‐electron bolometric mixers |
1996 |
J. Appl. Phys. |
80 |
4232-4234 |
|
|
|
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse |
1995 |
J. Appl. Phys. |
77 |
4064-4070 |
|
|
|
Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films |
1994 |
J. Appl. Phys. |
76 |
1902-1909 |
|
|
|
Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation |
1992 |
J. Appl. Phys. |
72 |
5496-5499 |
|
|
|
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Generation of nanosecond terahertz pulses by the optical rectification method |
2012 |
JETP Lett. |
96 |
94-97 |
|
|
|
Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
|
|
|
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
