Records |
Author |
Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M. |
Title |
Quantum noise in a terahertz hot electron bolometer mixer |
Type |
Journal Article |
Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
96 |
Issue |
11 |
Pages |
111113-(1-3) |
Keywords |
HEB mixer, quantum limit, quantum noise, vacuum box, THz, Terahertz |
Abstract |
We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value. |
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624 |
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Author |
Khosropanah, P.; Merkel, H.; Yngvesson, S.; Adam, A.; Cherednichenko, S.; Kollberg, E. |
Title |
A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth |
Type |
Conference Article |
Year |
2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
474-488 |
Keywords |
HEB mixer numerical model, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model |
Abstract |
A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted. |
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University of Michigan, Ann Arbor, MI USA |
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893 |
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Author |
Cherednichenko, S.; Khosropanah, P.; Berg, T.; Merkel, H.; Kollberg, E.; Drakinskiy, V.; Voronov, B.; Gol’tsman, G. |
Title |
Optimization of HEB mixer for the Herschel Space Observatory |
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Abstract |
Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 15th Int. Symp. Space Terahertz Technol. |
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Pages |
16 |
Keywords |
NbN HEB mixers, applications |
Abstract |
A mixer development for the HIFI instrument of the Herschel Space Observatory has come to the final stage. In our paper and conference presentation we will describe the most important details of the Band 6 Low and High Mixer Unit design. Special attention will be given to the optimization of the hot- electron bolometer mixer chip, which is based on 3.5nm NbN superconducting film on silicon. As the HEB’s local oscillator power requirements depend on the bolometer size, we have compared mixer noise temperature for different bolometer width- to- length ratio. A trade- off between mixer performance and local oscillator power requirements results in the mixer units equipped with optimized mixer chips, providing the largest coverage of the Band6 RF band with the lowest possible receiver noise. A short account of the beam pattern measurements of Band6 mixers will be given as well. |
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1490 |
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Cherednichenko, S.; Khosropanah, P.; Adam, A.; Merkel, H. F.; Kollberg, E. L.; Loudkov, D.; Gol'tsman, G. N.; Voronov, B. M.; Richter, H.; Huebers, H.-W. |
Title |
1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory |
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Conference Article |
Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
4855 |
Issue |
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Pages |
361-370 |
Keywords |
NbN HEB mixers |
Abstract |
NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope. |
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SPIE |
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Phillips, T.G.; Zmuidzinas, J. |
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Millimeter and Submillimeter Detectors for Astronomy |
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1521 |
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Author |
Loudkov, D.; Khosropanah, P.; Cherednichenko, S.; Adam, A.; MerkeI, H.; Kollberg, E.; Gol'tsman, G. |
Title |
Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies |
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Conference Article |
Year |
2002 |
Publication |
Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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Pages |
373-369 |
Keywords |
NbN HEB mixers |
Abstract |
The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state. |
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1530 |
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