Sidorova, M., Semenov, A., Korneev, A., Chulkova, G., Korneeva, Y., Mikhailov, M., et al. (2018). Electron-phonon relaxation time in ultrathin tungsten silicon film. arXiv:1607.07321v1 [physics.ins-det].
Abstract: Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
|
Sidorova, M. V., Kozorezov, A. G., Semenov, A. V., Korneev, A. A., Chulkova, G. M., Korneeva, Y. P., et al. (2018). Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film. arXiv:1607.07321v4 [physics.ins-det].
Abstract: We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques.
|
Murphy, A., Semenov, A., Korneev, A., Korneeva, Y., Gol’tsman, G., & Bezryadin, A. (2014). Dark counts initiated by macroscopic quantum tunneling in NbN superconducting photon detectors. arXiv:1410.7689v2 [cond-mat.supr-con].
Abstract: We perform measurements of the switching current distributions of three w = 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors.
|
Korneev, A., Korneeva, Y., Florya, I., Voronov, B., & Goltsman, G. (2011). Spectral sensitivity of narrow strip NbN superconducting single-photon detector. In J. Fiurásek, & I. Prochazka (Eds.), Proc. SPIE (Vol. 8072, 80720G (1 to 9)). SPIE.
Abstract: Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.
|
Shcherbatenko, M., Elezov, M., Manova, N., Sedykh, K., Korneev, A., Korneeva, Y., et al. (2021). Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber. Appl. Phys. Lett., 118(18), 181103.
Abstract: High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the single-pixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the single-photon level.
We thank Philipp Zolotov and Pavel Morozov for NbN film fabrication, ARC coating, and fiber coupling of the detector. We also thank Swabian Instruments GmbH and Dr. Helmut Fedder personally for the kindly provided experimental equipment (Time Tagger Ultra 8). The work in the part of SNSPD research and development was supported by the Russian Foundation for Basic Research Project No. 18-29-20100. The work in the part of the optical setup and imaging was supported by Russian Foundation for Basic Research Project No. 20-32-51004.
|
