Abstract: Phase slips are topological fluctuations that carry the superconducting order-parameter field between distinct current-carrying states. Owing to these phase slips, superconducting nanowires acquire electrical resistance. In such wires, it is well known that at higher temperatures phase slips occur through the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed through quantum tunnelling events, which are known as quantum phase slips. However, resistive measurements have produced evidence both for and against the occurrence of quantum phase slips. Here, we report evidence for the observation of individual quantum phase-slip events in homogeneous ultranarrow wires at high bias currents. We accomplish this through measurements of the distribution of switching currents for which the width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. Importantly, measurements show that in nanowires with larger critical currents, quantum fluctuations dominate thermal fluctuations up to higher temperatures.

Abstract: Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity.

Abstract: The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors.

Abstract: A waveguide 1.25–1.39 THz Hot Electron Bolometer (HEB) balanced receiver was successfully developed, characterized and installed at the Atacama Pathfinder EXperiment (APEX) telescope. The receiver employs a quadrature balanced scheme using a waveguide 90-degree 3 dB RF hybrid, HEB mixers and a 180-degree IF hybrid. The HEB mixers are based on ultrathin NbN film deposited on crystalline quartz with a MgO buffer layer. Integrated into the multi-channel APEX facility receiver (SHeFI), the results presented here demonstrate exceptional performance; a receiver noise temperature of 1000 K measured at the telescope at the center of the receiver IF band 2-4 GHz, and at an LO frequency of 1294 GHz. Stability of the receiver is fully in line with the SIS mixer bands of the SHeFI, and gives a spectroscopic Allan time of more than 200 s with a noise bandwidth of 1 MHz.

Abstract: A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).