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Author |
Smirnov, Konstantin; Vachtomin, Yury; Divochiy, Alexander; Antipov, Andrey; Goltsman, Gregory |
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Title |
Dependence of dark count rates in superconducting single photon detectors on the filtering effect of standard single mode optical fibers |
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Journal Article |
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Year |
2015 |
Publication |
Appl. Phys. Express |
Abbreviated Journal |
Appl. Phys. Express |
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Volume |
8 |
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2 |
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022501 (1 to 4) |
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IOP Publishing |
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1882-0778 |
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RPLAB @ sasha @ smirnov2015dependence |
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1049 |
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Author |
Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. |
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Title |
Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer |
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Journal Article |
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Year |
2012 |
Publication |
Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
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Volume |
36 |
Issue |
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Pages |
334-337 |
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Keywords |
NbN HEB mixer |
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Abstract |
We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. |
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1875-3892 |
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1381 |
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Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
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Title |
NbN nanowire superconducting single-photon detector for mid-infrared |
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Journal Article |
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Year |
2012 |
Publication |
Phys. Procedia |
Abbreviated Journal |
Phys. Procedia |
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36 |
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72-76 |
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NbN SSPD, SNSPD |
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Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response. |
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1382 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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Journal Article |
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Year |
2019 |
Publication |
Phys. Status Solidi RRL |
Abbreviated Journal |
Phys. Status Solidi RRL |
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Volume |
13 |
Issue |
9 |
Pages |
1900187-(1-6) |
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Abstract |
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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1149 |
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Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. |
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Title |
Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide |
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Journal Article |
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Year |
2018 |
Publication |
Armenian J. Phys. |
Abbreviated Journal |
Armenian J. Phys. |
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Volume |
11 |
Issue |
4 |
Pages |
257-262 |
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Keywords |
THz, waveguide, nonlinear crystal |
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The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant. |
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1829-1171 |
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1291 |
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