|   | 
Details
   web
Records
Author Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G.
Title Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits Type Conference Article
Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC
Volume Issue Pages 1-3
Keywords SSPD, SNSPD
Abstract We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 8314200 Serial 1200
Permanent link to this record
 

 
Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
Title Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform Type Conference Article
Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 917 Issue Pages 062042
Keywords Si3N4, Bragg waveguides
Abstract We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1141
Permanent link to this record
 

 
Author Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N.
Title Optimisation of spontaneous four-wave mixing in a ring microcavity Type Conference Article
Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 47 Issue 10 Pages 887-891
Keywords ring microcavity
Abstract Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1142
Permanent link to this record
 

 
Author Флоря, И. Н.
Title Ультрабыстрый однофотонный детектор для оптических применений Type Conference Article
Year 2009 Publication Науч. сессия МИФИ Abbreviated Journal Науч. сессия МИФИ
Volume Issue Pages 45-46
Keywords SSPD
Abstract Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) ISBN 978-5-7262-1042-1 Medium
Area Expedition Conference
Notes УДК 533.14(06)+004.056(06) Фотоника и информационная оптика Approved no
Call Number Serial 1145
Permanent link to this record
 

 
Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages 369-371
Keywords silicon detector, quantum dot, IR, surface states
Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) ISBN 978-5-89513-451-1 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1154
Permanent link to this record