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Author Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D. url  openurl
  Title Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution Type Journal Article
  Year 1991 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume 34 Issue 2 Pages 125-131  
  Keywords BWO, applications  
  Abstract The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range.  
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  ISSN (down) 0032-8162 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1683  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. url  openurl
  Title Submillimeter backward wave tube spectrometer for measuring superconducting film transmission Type Journal Article
  Year 1983 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume 26 Issue 5 Pages 134-137  
  Keywords BWO spectroscopy, spectrometer, transmission  
  Abstract A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN (down) 0032-8162 ISBN Medium  
  Area Expedition Conference  
  Notes Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок Approved no  
  Call Number Serial 1713  
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Author Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. url  doi
openurl 
  Title Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses Type Journal Article
  Year 2013 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume 110 Issue 26 Pages 267003 (1 to 5)  
  Keywords NbN thin films, energy gap  
  Abstract Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale.  
  Address Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany  
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  Series Volume Series Issue Edition  
  ISSN (down) 0031-9007 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:23848912 Approved no  
  Call Number Serial 1370  
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Author Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. url  doi
openurl 
  Title Design and performance of the lattice-cooled hot-electron terahertz mixer Type Journal Article
  Year 2000 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 88 Issue 11 Pages 6758-6767  
  Keywords HEB mixer, charge imbalance, HF current distribution  
  Abstract We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN (down) 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 306  
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. url  doi
openurl 
  Title Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes Type Journal Article
  Year 2007 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 101 Issue 12 Pages 124508 (1 to 6)  
  Keywords HEB, mixer, membrane  
  Abstract The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 560  
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