Records |
Author |
Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V. |
Title |
Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range |
Type |
Conference Article |
Year |
2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
917 |
Issue |
|
Pages |
062037 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range. |
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1742-6588 |
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Call Number |
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Serial |
1233 |
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Author |
Milostnaya, I.; Korneev, A.; Rubtsova, I.; Seleznev, V.; Minaeva, O.; Chulkova, G.; Okunev, O.; Voronov, B.; Smirnov, K.; Gol'tsman, G.; Slysz, W.; Wegrzecki, M.; Guziewicz, M.; Bar, J.; Gorska, M.; Pearlman, A.; Kitaygorsky, J.; Cross, A.; Sobolewski, R. |
Title |
Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength |
Type |
Conference Article |
Year |
2006 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
43 |
Issue |
|
Pages |
1334-1337 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications. |
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1742-6588 |
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no |
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1450 |
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Author |
Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
Type |
Journal Article |
Year |
2005 |
Publication |
Phys. Stat. Sol. (C) |
Abbreviated Journal |
Phys. Stat. Sol. (C) |
Volume |
2 |
Issue |
5 |
Pages |
1480-1488 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. |
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ISSN |
1610-1634 |
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no |
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Serial |
1479 |
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Author |
Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. |
Title |
Ultrafast superconducting bolometer receivers for terahertz applications |
Type |
Abstract |
Year |
2009 |
Publication |
Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
Volume |
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Issue |
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Pages |
867 |
Keywords |
HEB |
Abstract |
The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe. |
Address |
Moscow, Russia |
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Publisher |
The Electromagnetics Academy |
Place of Publication |
777 Concord Avenue, Suite 207 Cambridge, MA 02138 |
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Edition |
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ISSN |
1559-9450 |
ISBN |
978-1-934142-09-7 |
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RPLAB @ sasha @ ozhegovultrafast |
Serial |
1022 |
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Author |
Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. |
Title |
Fabrication and properties of an ultrafast NbN hot-electron single-photon detector |
Type |
Journal Article |
Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
11 |
Issue |
1 |
Pages |
574-577 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. |
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Edition |
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ISSN |
1558-2515 |
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no |
Call Number |
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Serial |
1547 |
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Author |
Pearlman, A.; Cross, A.; Slysz, W.; Zhang, J.; Verevkin, A.; Currie, M.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Sobolewski, R. |
Title |
Gigahertz counting rates of NbN single-photon detectors for quantum communications |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
15 |
Issue |
2 |
Pages |
579-582 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented. |
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1558-2515 |
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no |
Call Number |
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Serial |
1465 |
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Author |
Korneev, A.; Matvienko, V.; Minaeva, O.; Milostnaya, I.; Rubtsova, I.; Chulkova, G.; Smirnov, K.; Voronov, V.; Gol’tsman, G.; Slysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
Title |
Quantum efficiency and noise equivalent power of nanostructured, NbN, single-photon detectors in the wavelength range from visible to infrared |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
15 |
Issue |
2 |
Pages |
571-574 |
Keywords |
NbN SSPD, SNSPD, QE, NEP |
Abstract |
We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications. |
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1558-2515 |
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no |
Call Number |
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Serial |
1467 |
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Author |
Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
Title |
Fabrication of nanostructured superconducting single-photon detectors |
Type |
Journal Article |
Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
13 |
Issue |
2 |
Pages |
192-195 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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1558-2515 |
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no |
Call Number |
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Serial |
1515 |
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Author |
Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
Type |
Journal Article |
Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
Volume |
9 |
Issue |
4 |
Pages |
242-245 |
Keywords |
NbN HEB mixers |
Abstract |
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Edition |
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ISSN |
1069-1227 |
ISBN |
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no |
Call Number |
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Serial |
1550 |
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Author |
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
Volume |
48 |
Issue |
6 |
Pages |
671-675 |
Keywords |
NbN HEB mixers |
Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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Edition |
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1064-2269 |
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Notes |
https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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no |
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Vakhtomin2003 |
Serial |
1522 |
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Author |
Smirnov, A. V.; Karmantsov, M. S.; Smirnov, K. V.; Vakhtomin, Y. B.; Masterov, D. V.; Tarkhov, M. A.; Pavlov, S. A.; Parafin, A. E. |
Title |
Terahertz response of thin-film YBCO bolometers |
Type |
Journal Article |
Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
Volume |
57 |
Issue |
12 |
Pages |
1716-1719 |
Keywords |
YBCO HEB |
Abstract |
The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed. |
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1063-7842 |
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no |
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Serial |
1817 |
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Author |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Title |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
Type |
Journal Article |
Year |
2010 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
44 |
Issue |
11 |
Pages |
1427-1429 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
Abstract |
The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). |
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1063-7826 |
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Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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no |
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1216 |
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Author |
Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
Title |
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
Type |
Journal Article |
Year |
2005 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
39 |
Issue |
9 |
Pages |
1082-1086 |
Keywords |
2D electron gas, AlGaAs/GaAs heterostructures, mixers |
Abstract |
Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. |
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1063-7826 |
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no |
Call Number |
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1463 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
Type |
Journal Article |
Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
33 |
Issue |
5 |
Pages |
551-554 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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Series Volume |
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Edition |
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ISSN |
1063-7826 |
ISBN |
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Medium |
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no |
Call Number |
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Serial |
1571 |
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Author |
Glejm, A. V.; Anisimov, A. A.; Asnis, L. N.; Vakhtomin, Yu. B.; Divochiy, A. V.; Egorov, V. I.; Kovalyuk, V. V.; Korneev, A. A.; Kynev, S. M.; Nazarov, Yu. V.; Ozhegov, R. V.; Rupasov, A. V.; Smirnov, K. V.; Smirnov, M. A.; Goltsman, G. N.; Kozlov, S. A. |
Title |
Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s |
Type |
Journal Article |
Year |
2014 |
Publication |
Bulletin of the Russian Academy of Sciences. Physics |
Abbreviated Journal |
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Volume |
78 |
Issue |
3 |
Pages |
171-175 |
Keywords |
SSPD, SNSPD, applications |
Abstract |
An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described. |
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Edition |
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ISSN |
1062-8738 |
ISBN |
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Medium |
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Notes |
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no |
Call Number |
RPLAB @ kovalyuk @ |
Serial |
940 |
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