Author |
Title |
Year |
Publication |
Volume |
Pages |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
55-58 |
Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
Hot electron mixers for THz applications |
1996 |
Proc. 30th ESLAB |
|
207-210 |
Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S. |
Hot electron mixers, the potential competition |
1992 |
Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
|
201-206 |
Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Picosecond response on optical-range emission in thin YBaCuO films |
1991 |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
17 |
6-10 |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |