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Author Korneeva, Y.; Sidorova, M.; Semenov, A.; Krasnosvobodtsev, S.; Mitsen, K.; Korneev, A.; Chulkova, G.; Goltsman, G.
Title Comparison of hot-spot formation in NbC and NbN single-photon detectors Type Journal Article
Year 2016 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 26 Issue 3 Pages 1-4
Keywords NbC, NbN SSPD, SNSPD
Abstract We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN.
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ISSN (down) 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1348
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Author Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R.
Title Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 9 Issue 2 Pages 3338-3341
Keywords NbN SSPD, SNSPD
Abstract We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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ISSN (down) 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1566
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Author Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N.
Title Picosecond response of a superconducting hot-electron NbN photodetector Type Journal Article
Year 1998 Publication Appl. Supercond. Abbreviated Journal Appl. Supercond.
Volume 6 Issue 7-9 Pages 423-428
Keywords NbN SSPD, SNSPD
Abstract The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (down) 0964-1807 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1584
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Author Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M.
Title Sensitivity of a superconducting nanowire detector for single ions at low energy Type Journal Article
Year 2012 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 23 Issue 6 Pages 065501 (1 to 5)
Keywords NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID
Abstract We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.
Address Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria
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Language English Summary Language Original Title
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ISSN (down) 0957-4484 ISBN Medium
Area Expedition Conference
Notes PMID:22248823 Approved no
Call Number Serial 1380
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Author Korneeva, Y. P.; Manova, N. N.; Dryazgov, M. A.; Simonov, N. O.; Zolotov, P. I.; Korneev, A. A.
Title Influence of sheet resistance and strip width on the detection efficiency saturation in micron-wide superconducting strips and large-area meanders Type Journal Article
Year 2021 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 34 Issue 8 Pages 084001
Keywords NbN SSPD, SMSPD
Abstract We report our study of detection efficiency (DE) saturation in wavelength range 400 – 1550 nm for the NbN Superconducting Microstrip Single-Photon Detectors (SMSPD) featuring the strip width up to 3 μm. We observe an expected decrease of the $DE$ saturation plateau with the increase of photon wavelength and decrease of film sheet resistance. At 1.7 K temperature DE saturation can be clearly observed at 1550 nm wavelength in strip with the width up to 2 μm when sheet resistance of the film is above 630Ω/sq. In such strips the length of the saturation plateau almost does not depend on the strip width. We used these films to make meander-shaped detectors with the light sensitive area from 20×20μm2 to a circle 50 μm in diameter. In the latter case, the detector with the strip width of 0.49 μm demonstrates saturation of DE up to 1064 nm wavelength. Although DE at 1310 and 1550 nm is not saturated, it is as high as 60%. The response time is limited by the kinetic inductance and equals to 20 ns(by 1/e decay), timing jitter is 44 ps. When coupled to multi-mode fibre large-area meanders demonstrate significantly higher dark count rate which we attribute to thermal background photons, thus advanced filtering technique would be required for practical applications.
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Language Summary Language Original Title
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Series Volume Series Issue Edition
ISSN (down) 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1793
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