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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
Year |
2019 |
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Proc. IWQO |
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Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory |
Title |
Performance of an HEB direct detector utilizing a microwave reflection readout scheme |
Type |
Conference Article |
Year |
2015 |
Publication |
Proc. 26th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 26th Int. Symp. Space Terahertz Technol. |
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36 |
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HEB detector |
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We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. |
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1158 |
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Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. |
Title |
Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material |
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Miscellaneous |
Year |
2017 |
Publication |
Optica |
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1-9 |
Keywords |
Quantum detectors; Spectrometers and spectroscopic instrumentation; Nanophotonics and photonic crystals; Fluorescence correlation spectroscopy; Fluorescence resonance energy transfer; Fluorescence spectroscopy; Imaging techniques; Optical components; Quantum key distribution |
Abstract |
This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers. |
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Osa |
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Kahl:17 |
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1218 |
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Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R. |
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Ultrafast and high quantum efficiency large-area superconducting single-photon detectors |
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Conference Article |
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2007 |
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Proc. SPIE |
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Proc. SPIE |
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6583 |
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65830I (1 to 9) |
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SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors |
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We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped 0.5-mm-long and 100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of 30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications. |
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Spie |
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Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A. |
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1249 |
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Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. |
Title |
Практические особенности работы оптоволоконного квантового приемника Кеннеди |
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Conference Article |
Year |
2019 |
Publication |
Proc. IWQO |
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Proc. IWQO |
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303-305 |
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Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection |
Abstract |
Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. |
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Russian |
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Duplicated as 1288 |
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1283 |
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Author |
Goltsman, G. |
Title |
Quantum-photonic integrated circuits |
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Conference Article |
Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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22-23 |
Keywords |
WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector |
Abstract |
We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. |
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1287 |
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Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
Title |
Superconducting hot electron bolometer mixer for middle IR range |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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686-687 |
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IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Title |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
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Conference Article |
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2018 |
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Proc. Optical Sensing and Detection V |
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Proc. Optical Sensing and Detection V |
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10680 |
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30-39 |
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graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves |
Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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Spie |
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Berghmans, F.; Mignani, A.G. |
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10.1117/12.2307020 |
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1306 |
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Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. |
Title |
Attojoule energy resolution of direct detector based on hot electron bolometer |
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Conference Article |
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2016 |
Publication |
J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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741 |
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012165 (1 to 5) |
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NbN HEB detector |
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We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. |
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IOP Publishing |
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Seliverstov_2016 |
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1337 |
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Shurakov, Alexander; Tong, Cheuk-yu E.; Blundell, Raymond; Gol’tsman, Gregory |
Title |
A microwave pumped HEB direct detector using a homodyne readout scheme |
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Abstract |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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129 |
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waveguide NbN HEB detector, NEP |
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We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let. |
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