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Tretyakov, I., Shurakov, A., Perepelitsa, A., Kaurova, N., Svyatodukh, S., Zilberley, T., et al. (2019). Silicon room temperature IR detectors coated with Ag2S quantum dots. In Proc. IWQO (pp. 369–371).
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Komrakova, S., Javadzade, J., Vorobyov, V., Bolshedvorskii, S., Soshenko, V., Akimov, A., et al. (2019). CMOS compatible nanoantenna-nanodiamond integration. In J. Phys.: Conf. Ser. (Vol. 1410, 012180).
Abstract: Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
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Zubkova, E., Golikov, A., An, P., Kovalyuk, V., Korneev, A., Ferrari, S., et al. (2019). CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide. In J. Phys.: Conf. Ser. (Vol. 1410, 012179).
Abstract: We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm.
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Kuzin, A., Kovalyuk, V., Golikov, A., Prokhodtsov, A., Marakhin, A., Ferrari, S., et al. (2019). Efficiency of focusing grating couplers versus taper length and angle. In J. Phys.: Conf. Ser. (Vol. 1410, 012181).
Abstract: Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle.
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Bakhvalova, T., Belkin, M. E., Kovalyuk, V. V., Prokhodtcov, A. I., Goltsman, G. N., & Sigov, A. S. (2019). Studying key principles for design and fabrication of silicon photonic-based beamforming networks. In PIERS-Spring (pp. 745–751).
Abstract: In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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Prokhodtsov, A., Golikov, A., An, P., Kovalyuk, V., Goltsman, G., Arakelyan, S., et al. (2019). Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency. In EPJ Web Conf. (Vol. 220, 02009).
Abstract: The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
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Elmanov, I., Elmanova, A., Komrakova, S., Golikov, A., Kaurova, N., Kovalyuk, V., et al. (2019). Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform. In EPJ Web Conf. (Vol. 220, 03012).
Abstract: In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
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Elmanova, A., Elmanov, I., Komrakova, S., Golikov, A., Javadzade, J., Vorobyev, V., et al. (2019). Integration of nanodiamonds with NV-centers on optical silicon nitride structures. In EPJ Web Conf. (Vol. 220, 03013).
Abstract: In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
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Moshkova, M., Morozov, P., Divochiy, A., Vakhtomin, Y., & Smirnov, K. (2019). Large active area superconducting single photon detector. In J. Phys.: Conf. Ser. (Vol. 1410, 012139).
Abstract: We present development of large active area superconducting single-photon detectors well coupled with standard 50 μm-core multi-mode fiber. The sensitive area of the SSPD is patterned using the photon-number-resolving design and occupies an area of 40×40 μm2. Using this approach, we have obtained excellent specifications: system detection efficiency of 47% measured using a 900 nm laser and low dark count rate of 100 cps. The main advantages of the approach presented are a very short dead time of the detector of 22 ns and FWHM jitter value of about 130 ps.
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Titova, N., Gayduchenko, I. A., Moskotin, M. V., Fedorov, G. F., & Goltsman, G. N. (2019). Carbon nanotube based terahertz radiation detectors. In J. Phys.: Conf. Ser. (Vol. 1410, 012208 (1 to 5)).
Abstract: In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested.
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