Records |
Author |
Hocker, L. O.; Sokoloff, D. R.; Daneu, V.; Szoke, A.; Javan, A. |
Title |
Frequency mixing in the infrared and far-infrared using a metal-to-metal point contact diode |
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Journal Article |
Year |
1968 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
12 |
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12 |
Pages |
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Keywords |
optical antennas |
Abstract |
Metalâ€toâ€metal point contact diodes were used to obtain the 54â€GHz beat notes between two adjacent 10.6â€μ CO2 laser transitions. The speed of the diodes in the farâ€infrared is at least 1000 GHz. This was tested with a 337â€μ HCN laser. |
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RPLAB @ gujma @ |
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742 |
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Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G. |
Title |
Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers |
Type |
Journal Article |
Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
72 |
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12 |
Pages |
1516-1518 |
Keywords |
HEB mixer; thermal fluctuation noise; TFN |
Abstract |
A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band). |
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RPLAB @ gujma @ |
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760 |
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Author |
Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
Title |
Low noise superconducting single photon detectors on silicon |
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Journal Article |
Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
93 |
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13 |
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131101 |
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0003-6951 |
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RPLAB @ s @ |
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436 |
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Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
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Journal Article |
Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
79 |
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15 |
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2483-2485 |
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0003-6951 |
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311 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
Title |
Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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Journal Article |
Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
97 |
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15 |
Pages |
3 |
Keywords |
SSPD |
Abstract |
We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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RPLAB @ gujma @ |
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681 |
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Author |
Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
Title |
Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer |
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Journal Article |
Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
68 |
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16 |
Pages |
2285-2287 |
Keywords |
HEB mixer, diffusion cooling channel, diffusion channel |
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0003-6951 |
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262 |
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Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar |
Title |
Single quantum dots emit single photons at a time: Antibunching experiments |
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Journal Article |
Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
78 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
17 |
Pages |
2476 |
Keywords |
antibunching, quantum dot |
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0003-6951 |
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502 |
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Sprengers, J. P.; Gaggero, A.; Sahin, D.; Jahanmirinejad, S.; Frucci, G.; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A. |
Title |
Waveguide superconducting single-photon detectors for integrated quantum photonic circuits |
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Journal Article |
Year |
2011 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
99 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
18 |
Pages |
181110(1-3) |
Keywords |
optical waveguides, waveguide SSPD |
Abstract |
The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (~0%) at telecom wavelengths, high timing accuracy (~0 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators. |
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847 |
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Author |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
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Journal Article |
Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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73 |
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19 |
Pages |
2826 |
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HEB |
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0003-6951 |
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543 |
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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
Title |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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Journal Article |
Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
95 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
19 |
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3 |
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2DEG |
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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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RPLAB @ gujma @ |
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673 |
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