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| Author | Inderbitzin, K.; Engel, A.; Schilling, A.; Il'in, K.; Siegel, M. | ||||
| Title | An ultra-fast superconducting Nb nanowire single-photon detector for soft x-rays | Type | Journal Article | ||
| Year | 2012 | Publication | Abbreviated Journal | Appl. Phys. Lett. | |
| Volume | 101 | Issue  |
Pages | ||
| Keywords | SSPD, SNSPD, x-ray, Nb | ||||
| Abstract | Although superconducting nanowire single-photon detectors (SNSPDs) are well studied regarding the detection of infrared/optical photons and keV-molecules, no studies on continuous x-ray photon counting by thick-film detectors have been reported so far. We fabricated a 100 nm thick niobium x-ray SNSPD (an X-SNSPD) and studied its detection capability of photons with keV-energies in continuous mode. The detector is capable to detect photons even at reduced bias currents of 0.4%, which is in sharp contrast to optical thin-film SNSPDs. No dark counts were recorded in extended measurement periods. Strikingly, the signal amplitude distribution depends significantly on the photon energy spectrum.VC |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ seleznev @ | Serial | 878 | ||
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| Author | Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. | ||||
| Title | Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers | Type | Conference Article | ||
| Year | 1997 | Publication | Proc. 27th Eur. Microwave Conf. | Abbreviated Journal | |
| Volume | 2 | Issue |
Pages | 972-977 | |
| Keywords | HEB mixer, fabrication process | ||||
| Abstract | The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. | ||||
| Address | Jerusalem, Israel | ||||
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| Publisher | IEEE | Place of Publication | Editor | ||
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| Area | Expedition | Conference | 27th Eur. Microwave Conf. | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1075 | |||
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| Author | Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B. | ||||
| Title | Thickness dependence of superconducting properties of ultrathin Nb and NbN films | Type | Conference Article | ||
| Year | 2004 | Publication | AKF-Frühjahrstagung | Abbreviated Journal | |
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Pages | |||
| Keywords | Nb, NbN films, has potential plagiarism | ||||
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| Address | Berlin-Adlershof | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1503 | |||
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| Author | Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman | ||||
| Title | Characterization of the electron energy relaxation process in NbN hot-electron devices | Type | Conference Article | ||
| Year | 1999 | Publication | Proc. 10th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume | Issue |
Pages | 390-397 | ||
| Keywords | HEB mixers, SSPD, SNSPD, NbN films, Nb films | ||||
| Abstract | We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1576 | |||
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| Author | Il'in, K. S.; Cherednichenko, S. I.; Gol'tsman, G. N.; Currie, M.; Sobolewski, R. | ||||
| Title | Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges | Type | Conference Article | ||
| Year | 1998 | Publication | Proc. 9th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 9th Int. Symp. Space Terahertz Technol. |
| Volume | Issue |
Pages | 323-330 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1590 | |||
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