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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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1976 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
43 |
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1 |
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116-122 |
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Keywords |
Ge, free excitons |
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Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Year |
1981 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
33 |
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11 |
Pages |
574 |
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Keywords |
Ge, excitons, photoconductivity |
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1718 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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1996 |
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Phys. Rev. B Condens. Matter. |
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Phys. Rev. B Condens. Matter. |
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53 |
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12 |
Pages |
R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
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Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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Journal Article |
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Year |
1997 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
56 |
Issue |
16 |
Pages |
10089-10096 |
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Keywords |
disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of electron and hole binding into excitons in germanium |
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Journal Article |
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Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
57 |
Issue |
2 |
Pages |
369-376 |
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Keywords |
Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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Journal Article |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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2 |
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355-362 |
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Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
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Journal Article |
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Year |
1973 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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37 |
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2 |
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299-304 |
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semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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1975 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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40 |
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2 |
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311-315 |
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Ge, cyclotron resonance |
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Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
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Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
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1998 |
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Phys. Rev. B |
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Phys. Rev. B |
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57 |
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24 |
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15623-15628 |
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NbC films |
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A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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1585 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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1988 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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22 |
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3 |
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540-543 |
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Ge, free holes, capture |
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Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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