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Gayduchenko, I. A., Fedorov, G. E., Moskotin, M. V., Yagodkin, D. I., Seliverstov, S. V., Goltsman, G. N., et al. (2018). Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices. Nanotechnol., 29(24), 245204 (1 to 8).
Abstract: We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
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Emelianov, A. V., Nekrasov, N. P., Moskotin, M. V., Fedorov, G. E., Otero, N., Romero, P. M., et al. (2021). Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation. Adv. Electron. Mater., 7(3), 2000872.
Abstract: The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
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