| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
| Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
33 |
Issue  |
11 |
Pages |
574 |
| Keywords |
Ge, excitons, photoconductivity |
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Serial |
1718 |
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| Author |
Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
| Title |
Механизм преобразования частоты в n-InSb-смесителе |
Type |
Journal Article |
| Year |
1991 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
25 |
Issue |
11 |
Pages |
1986-1998 |
| Keywords |
n-InSb mixer |
| Abstract |
Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
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Russian |
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1753 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
| Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
Type |
Journal Article |
| Year |
2007 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
101 |
Issue |
12 |
Pages |
124508 (1 to 6) |
| Keywords |
HEB, mixer, membrane |
| Abstract |
The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. |
| Title |
Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer |
Type |
Journal Article |
| Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
| Volume |
36 |
Issue |
12 |
Pages |
1103-1105 |
| Keywords |
NbN HEB mixer |
| Abstract |
Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW. |
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1063-7850 |
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no |
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1389 |
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Чулкова, Г. М.; Семёнов, А. В.; Дивочий, А. В.; Тархов, М. А. |
| Title |
Сверхпроводниковый однофотонный детектор с разрешением числа фотонов для систем дальней телекоммуникационной связи |
Type |
Journal Article |
| Year |
2011 |
Publication |
Ж. радиоэлектрон. |
Abbreviated Journal |
Ж. радиоэлектрон. |
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Issue |
12 |
Pages |
1-6 |
| Keywords |
PNR SSPD, SNSPD |
| Abstract |
Рассмотрена возможность применения сверхпроводникового однофотонного детектора, разрешающего число фотонов, в качестве датчика приёмных модулей телекоммуникационных линий. Показано, что для достижения доли ошибочных битов на уровне 10-11 достаточно на два порядка меньшей мощности в оптическом импульсе, чем при использовании существующих приёмных модулей. |
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no |
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RPLAB @ sasha @ чулковасверхпроводниковый |
Serial |
1031 |
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