| Records |
| Author |
Jiang, L.; Li, J.; Zhang, W.; Yao, Q. J.; Lin, Z. L.; Shi, S. C.; Vachtomin, Y. B.; Antipov, S. V.; Svechnikov, S. I.; Voronov, B. M.; Goltsman, G. N. |
| Title |
Characterization of NbN HEB mixers cooled by a close-cycled 4 Kelvin refrigerator |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue  |
2 |
Pages |
511-513 |
| Keywords |
NbN HEB mixers |
| Abstract |
It is quite beneficial to operate superconducting hot-electron-bolometer (HEB) mixers with a close-cycled 4 Kelvin refrigerator for real applications such as astronomy and atmospheric research. In this paper, a phononcooled NbN HEB mixer (quasioptical type) is thoroughly characterized under such a cooling circumstance. The effects of mechanical vibration, electrical interference, and temperature fluctuation of a two-stage Gifford-McMahon 4 Kelvin refrigerator upon the characteristics of the phononcooled NbN HEB mixer are investigated in particular. Detailed measurement results are presented. |
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1558-2515 |
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1469 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
4217-4220 |
| Keywords |
NbN HEB mixers |
| Abstract |
NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region. |
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1051-8223 |
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1568 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
3757-3760 |
| Keywords |
NbN HEB mixers |
| Abstract |
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1051-8223 |
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1569 |
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Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
| Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3572-3575 |
| Keywords |
NbN HEB mixers |
| Abstract |
The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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1051-8223 |
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1594 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
| Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
| Keywords |
NbN HEB mixers |
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1051-8223 |
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1595 |
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Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. |
| Title |
Spiral antenna NbN hot-electron bolometer mixer at submm frequencies |
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Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3395-3398 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB. |
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1051-8223 |
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no |
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1597 |
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Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M. |
| Title |
Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer |
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Journal Article |
| Year |
1996 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
69 |
Issue |
2 |
Pages |
260-262 |
| Keywords |
NbN HEB mixers |
| Abstract |
We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance. |
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0003-6951 |
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no |
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1610 |
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Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
| Title |
Hot electron quasioptical NbN superconducting mixer |
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Journal Article |
| Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
5 |
Issue |
2 |
Pages |
2232-2235 |
| Keywords |
NbN HEB mixers |
| Abstract |
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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no |
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1622 |
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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
| Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
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Journal Article |
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1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
70 |
Issue |
24 |
Pages |
3296-3298 |
| Keywords |
NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
| Abstract |
We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Lobanov, Y.; Tong, E.; Blundell, R.; Hedden, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz |
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Journal Article |
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2011 |
Publication |
IEEE Trans. Appl. Supercond. |
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| Volume |
21 |
Issue |
3 |
Pages |
628-631 |
| Keywords |
waveguide NbN HEB mixers |
| Abstract |
We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment. |
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