| Records |
| Author |
Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D. |
| Title |
Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution |
Type |
Journal Article |
| Year |
1991 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
| Volume |
34 |
Issue  |
2 |
Pages |
125-131 |
| Keywords |
BWO, applications |
| Abstract |
The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range. |
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0032-8162 |
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1683 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Population and lifetime of excited states of shallow impurities in Ge |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
49 |
Issue |
2 |
Pages |
355-362 |
| Keywords |
Ge, photothermal ionization, shallow impurities |
| Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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no |
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1719 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
| Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
37 |
Issue |
2 |
Pages |
299-304 |
| Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
| Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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no |
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1735 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
2 |
Pages |
63-65 |
| Keywords |
Ge, donors, excited states |
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1740 |
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Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Superconducting single photon detectors made by local oxidation with an atomic force microscope |
Type |
Journal Article |
| Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
90 |
Issue |
19 |
Pages |
191116 (1 t0 3) |
| Keywords |
SSPD |
| Abstract |
The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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0003-6951 |
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no |
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423 |
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