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Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator 2018 Radiophys. Quant. Electron. 60 988-992 details   doi
Tikhonov, V. V.; Polyakova, O. N.; Gol’tsman, G. N.; Dzardanov, A. L.; Boyarskiy, D. A. Determination of dielectric properties of ore minerals in the microwave band 2008 Radiophys. Quant. Electron. 51 966-974 details   doi
Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. An ultrafast NbN hot-electron single-photon detector for electronic applications 2002 Supercond. Sci. Technol. 15 1689-1692 details   doi
Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers 1999 IEEE Trans. Appl. Supercond. 47 2519-2527 details   doi
Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths 1997 Appl. Phys. Lett. 70 1619-1621 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time 1996 Phys. Rev. B Condens. Matter. 53 R7592-R7595 details   doi
Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation 1992 Sverkhprovodimost': Fizika, Khimiya, Tekhnika 5 2386-2402 details   url
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. Effect of a strong magnetic field on the spectrum of donors in InSb 1978 Sov. Phys. Semicond. 11 1395-1397 details   url
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. Carrier lifetime in excited states of shallow impurities in germanium 1977 JETP Lett. 25 539-543 details   url
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. Effect of a high magnetic field on the spectrum of donors in InSb 1977 Fizika i Tekhnika Poluprovodnikov 11 2373-2375 details   url
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