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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time 1996 Phys. Rev. B Condens. Matter. 53 R7592-R7595 details   doi
Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation 1992 Sverkhprovodimost': Fizika, Khimiya, Tekhnika 5 2386-2402 details   url
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. Effect of a strong magnetic field on the spectrum of donors in InSb 1978 Sov. Phys. Semicond. 11 1395-1397 details   url
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. Carrier lifetime in excited states of shallow impurities in germanium 1977 JETP Lett. 25 539-543 details   url
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. Effect of a high magnetic field on the spectrum of donors in InSb 1977 Fizika i Tekhnika Poluprovodnikov 11 2373-2375 details   url
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