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Author Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. doi  openurl
  Title Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers Type Journal Article
  Year 2016 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume 109 Issue (up) 13 Pages 132602  
  Keywords HEB mixer, contacts  
  Abstract We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.  
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  Call Number Serial 1107  
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Author Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. url  doi
openurl 
  Title The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts Type Conference Article
  Year 2018 Publication Materials Today: Proc. Abbreviated Journal Materials Today: Proc.  
  Volume 5 Issue (up) 13 Pages 27301-27306  
  Keywords graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor  
  Abstract We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2214-7853 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1316  
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. url  doi
openurl 
  Title Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
  Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 112 Issue (up) 14 Pages 141101 (1 to 5)  
  Keywords graphene field effect transistors, FET  
  Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.		  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1309  
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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
  Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki  
  Volume 15 Issue (up) 14 Pages 88-93  
  Keywords HTS HEB  
  Abstract  
  Address  
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  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0320-0116 ISBN Medium  
  Area Expedition Conference  
  Notes Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no  
  Call Number Serial 1693  
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Author Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. url  doi
openurl 
  Title Ultrafast superconducting single-photon detector Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue (up) 15 Pages 1670-1680  
  Keywords SSPD, SNSPD  
  Abstract The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 607  
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Author Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. url  doi
openurl 
  Title Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires Type Journal Article
  Year 2015 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 106 Issue (up) 15 Pages 151101 (1 to 5)  
  Keywords SSPD, SNSPD  
  Abstract We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.

W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's.

The authors declare no competing financial interests.		  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1211  
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. url  doi
openurl 
  Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
  Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 103 Issue (up) 18 Pages 181121 (1 to 5)  
  Keywords carbon nanotubes, CNT, THz radiation, SiO2 substrate  
  Abstract We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.  
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  ISSN 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1171  
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Author Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N. url  doi
openurl 
  Title Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films Type Journal Article
  Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 97 Issue (up) 18 Pages 184512 (1 to 13)  
  Keywords WSi films, diffusion constant, SSPD, SNSPD  
  Abstract We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1305  
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Author Shcherbatenko, M.; Elezov, M.; Manova, N.; Sedykh, K.; Korneev, A.; Korneeva, Y.; Dryazgov, M.; Simonov, N.; Feimov, A.; Goltsman, G.; Sych, D. url  doi
openurl 
  Title Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber Type Journal Article
  Year 2021 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 118 Issue (up) 18 Pages 181103  
  Keywords NbN SSPD, SNSPD  
  Abstract High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the single-pixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the single-photon level.

We thank Philipp Zolotov and Pavel Morozov for NbN film fabrication, ARC coating, and fiber coupling of the detector. We also thank Swabian Instruments GmbH and Dr. Helmut Fedder personally for the kindly provided experimental equipment (Time Tagger Ultra 8). The work in the part of SNSPD research and development was supported by the Russian Foundation for Basic Research Project No. 18-29-20100. The work in the part of the optical setup and imaging was supported by Russian Foundation for Basic Research Project No. 20-32-51004.		  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1770  
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Author Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. url  doi
openurl 
  Title Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits Type Journal Article
  Year 2013 Publication Opt. Express Abbreviated Journal Opt. Express  
  Volume 21 Issue (up) 19 Pages 22683-22692  
  Keywords SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides  
  Abstract We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1094-4087 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:24104155 Approved no  
  Call Number Serial 1213  
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Author Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. url  doi
openurl 
  Title Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation Type Journal Article
  Year 2015 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 118 Issue (up) 19 Pages 194303  
  Keywords terahertz detectors, asymmetric carbon nanotubes, CNT  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1169  
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Author Nasr, M. B.; Minaeva, O.; Goltsman, G. N.; Sergienko, A. V.; Saleh, B. E.; Teich, M. C. url  doi
openurl 
  Title Submicron axial resolution in an ultrabroadband two-photon interferometer using superconducting single-photon detectors Type Journal Article
  Year 2008 Publication Opt. Express Abbreviated Journal Opt. Express  
  Volume 16 Issue (up) 19 Pages 15104-15108  
  Keywords SSPD, SNSPD  
  Abstract We generate ultrabroadband biphotons via the process of spontaneous parametric down-conversion in a quasi-phase-matched nonlinear grating that has a linearly chirped poling period. Using these biphotons in conjunction with superconducting single-photon detectors (SSPDs), we measure the narrowest Hong-Ou-Mandel dip to date in a two-photon interferometer, having a full width at half maximum (FWHM) of approximately 5.7 fsec. This FWHM corresponds to a quantum optical coherence tomography (QOCT) axial resolution of 0.85 µm. Our results indicate that a high flux of nonoverlapping biphotons may be generated, as required in many applications of nonclassical light.  
  Address Departments of Electrical & Computer Engineering and Physics, Quantum Imaging Laboratory, Boston University, Boston, MA 02215, USA. boshra@bu.edu  
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  Language English Summary Language Original Title  
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  Series Volume Series Issue Edition  
  ISSN 1094-4087 ISBN Medium  
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  Notes PMID:18795048 Approved no  
  Call Number Serial 1408  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Wide-band highspeed Nb and YBaCuO detectors Type Journal Article
  Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal IEEE Trans. Magn.  
  Volume 27 Issue (up) 2 Pages 2836-2839  
  Keywords YBCO, HTS, Nb detectors  
  Abstract The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9464 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 239  
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. url  doi
openurl 
  Title Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements Type Journal Article
  Year 2011 Publication Semicond. Sci. Technol. Abbreviated Journal Semicond. Sci. Technol.  
  Volume 26 Issue (up) 2 Pages 025013  
  Keywords AlGaAs/GaAs heterojunctions  
  Abstract We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1215  
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Author Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. doi  openurl
  Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type Conference Article
  Year 2017 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences  
  Volume 132 Issue (up) 2 Pages 2  
  Keywords  
  Abstract Recently bright-light control of the SSPD has been

demonstrated. This attack employed a “backdoor” in the detector biasing

scheme. Under bright-light illumination, SSPD becomes resistive and

remains “latched” in the resistive state even when the light is switched off.

While the SSPD is latched, Eve can simulate SSPD single-photon response

by sending strong light pulses, thus deceiving Bob. We developed the

experimental setup for investigation of a dependence on latching threshold

of SSPD on optical pulse length and peak power. By knowing latching

threshold it is possible to understand essential requirements for

development countermeasures against blinding attack on quantum key

distribution system with SSPDs.		  
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  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1116  
Permanent link to this record
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