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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films 1993 Appl. Phys. Lett. 63 681-683 details   doi
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. Noise equivalent temperature difference of a superconducting integrated terahertz receiver 2009 J. Commun. Technol. Electron. 54 716-720 details   doi
Kurochkin, V. L.; Zverev, A. V.; Kurochkin, Y. V.; Ryabtsev, I. I.; Neizvestnyi, I. G.; Ozhegov, R. V.; Gol’tsman, G. N.; Larionov, P. A. Long-distance fiber-optic quantum key distribution using superconducting detectors 2015 Proc. Optoelectron. Instrum. 51 548-552 details   doi
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate 2007 Appl. Phys. Lett. 91 062504 (1 to 3) details   doi
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