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| Author | Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. | ||||
| Title | Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation | Type | Journal Article | ||
| Year | 2021 | Publication | Adv. Electron. Mater. | Abbreviated Journal | Adv. Electron. Mater. |
| Volume | 7 | Issue  |
3 | Pages | 2000872 |
| Keywords | SWCNT transistors | ||||
| Abstract | The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2199-160X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1843 | |||
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| Author | Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. | ||||
| Title | A method of optimization of the NbN superconducting single-photon detector | Type | Miscellaneous | ||
| Year | 2004 | Publication | INIS | Abbreviated Journal | INIS |
| Volume | 36 | Issue |
27 | Pages | 1-2 |
| Keywords | NbN SSPD, SNSPD | ||||
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| Area | Expedition | Conference | 5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION | ||
| Notes | Reference num. 36060124 | Approved | no | ||
| Call Number | Serial | 1485 | |||
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| Author | Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. | ||||
| Title | Ultimate quantum efficiency of a superconducting hot-electron photodetector | Type | Journal Article | ||
| Year | 1998 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 73 | Issue |
26 | Pages | 3938-3940 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1579 | |||
| Permanent link to this record | |||||
| Author | Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. | ||||
| Title | Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses | Type | Journal Article | ||
| Year | 2013 | Publication | Phys. Rev. Lett. | Abbreviated Journal | Phys. Rev. Lett. |
| Volume | 110 | Issue |
26 | Pages | 267003 (1 to 5) |
| Keywords | NbN thin films, energy gap | ||||
| Abstract | Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. | ||||
| Address | Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0031-9007 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:23848912 | Approved | no | ||
| Call Number | Serial | 1370 | |||
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| Author | Ejrnaes, M.; Cristiano, R.; Quaranta, O.; Pagano, S.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol’tsman, G. | ||||
| Title | A cascade switching superconducting single photon detector | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 91 | Issue |
26 | Pages | 262509 (1 to 3) |
| Keywords | SSPD, SNSPD, parallel-wire | ||||
| Abstract | We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns. This work was performed in the framework of the EU project “SINPHONIA” NMP4-CT-2005-016433. |
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1418 | |||
| Permanent link to this record | |||||