Abstract: A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.

Abstract: In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015).

Abstract: We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres.

Abstract: By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications.

Abstract: Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.

Abstract: We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.

Abstract: We describe the design and characterization of a fiber-coupled double-channel single-photon detection system based on superconducting single-photon detectors (SSPD), and its application for quantum optics experiments on semiconductor nanostructures. When operated at 2-K temperature, the system shows 10% quantum efficiency at 1.3-¿m wavelength with dark count rate below 10 counts per second and timing resolution <100 ps. The short recovery time and absence of afterpulsing leads to counting frequencies as high as 40 MHz. Moreover, the low dark count rate allows operation in continuous mode (without gating). These characteristics are very attractive-as compared to InGaAs avalanche photodiodes-for quantum optics experiments at telecommunication wavelengths. We demonstrate the use of the system in time-correlated fluorescence spectroscopy of quantum wells and in the measurement of the intensity correlation function of light emitted by semiconductor quantum dots at 1300 nm.