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Author Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. doi  openurl
  Title Characterization of MoSi superconducting single-photon detectors in the magnetic field Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue (down) 3 Pages 2200504 (1 to 4)  
  Keywords SSPD, SNSPD  
  Abstract We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.  
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  Call Number RPLAB @ akorneev @ KorneevIEEE2015 Serial 991  
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Author Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. url  doi
openurl 
  Title Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors Type Journal Article
  Year 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 91 Issue (down) 3 Pages 031106 (1 to 3)  
  Keywords SSPD, SNSPD, APD  
  Abstract The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots.

This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program.
 
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  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Erratum: 1395 Approved no  
  Call Number Serial 1396  
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Author Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. url  doi
openurl 
  Title Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime Type Journal Article
  Year 2020 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 128 Issue (down) 22 Pages 224303 (1 to 11)  
  Keywords HEB, resonant tunneling diode, RTD  
  Abstract The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.  
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  ISSN 0021-8979 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1262  
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Author Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. doi  openurl
  Title Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 13 Issue (down) 2 Pages 168-171  
  Keywords NbN HEB mixers  
  Abstract We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz.  
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  Call Number Serial 343  
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. url  doi
openurl 
  Title Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements Type Journal Article
  Year 2011 Publication Semicond. Sci. Technol. Abbreviated Journal Semicond. Sci. Technol.  
  Volume 26 Issue (down) 2 Pages 025013  
  Keywords AlGaAs/GaAs heterojunctions  
  Abstract We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.  
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  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1215  
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