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Author |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Wide-band highspeed Nb and YBaCuO detectors |
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Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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Volume |
27 |
Issue |
2 |
Pages |
2836-2839 |
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Keywords |
YBCO, HTS, Nb detectors |
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Abstract |
The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation. |
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0018-9464 |
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239 |
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Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
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Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
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Journal Article |
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Year |
1993 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
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Volume |
18 |
Issue |
2 |
Pages |
96-97 |
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Keywords |
YBCO HTS detectors |
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We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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English |
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0146-9592 |
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PMID:19802049 |
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1660 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
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Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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27 |
Issue |
2 |
Pages |
1321-1324 |
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Keywords |
YBCO HTS detectors |
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Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable. |
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1941-0069 |
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1679 |
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Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
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Title |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
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Journal Article |
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Year |
2000 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
76 |
Issue |
19 |
Pages |
2752-2754 |
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Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
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We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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0003-6951 |
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856 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
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Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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Journal Article |
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Year |
2015 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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Volume |
118 |
Issue |
19 |
Pages |
194303 |
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Keywords |
terahertz detectors, asymmetric carbon nanotubes, CNT |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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1169 |
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