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Author Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses Type Journal Article
  Year 1994 Publication J. Supercond. Abbreviated Journal J. Supercond.  
  Volume 7 Issue (up) 4 Pages 751-755  
  Keywords YBCO HTS detector, nonequilibrium response  
  Abstract The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0896-1107 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1636  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation Type Journal Article
  Year 1990 Publication Solid State Communications Abbreviated Journal Solid State Communications  
  Volume 76 Issue (up) 4 Pages 493-497  
  Keywords YBCO HTS detectors  
  Abstract The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1685  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. url  openurl
  Title Submillimeter backward-wave-tube spectrometer-relaxometer Type Journal Article
  Year 1987 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume 30 Issue (up) 4 Pages 131-137  
  Keywords BWO, applications  
  Abstract A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.  
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  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1699  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. url  openurl
  Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
  Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 64 Issue (up) 4 Pages 889-897  
  Keywords Ge, trapping of free carriers  
  Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).  
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  Notes Approved no  
  Call Number Serial 1707  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
  Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 16 Issue (up) 4 Pages 161-162  
  Keywords Ge, energy spectrum, free excitons  
  Abstract  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1736  
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
  Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy  
  Volume 52 Issue (up) 4 Pages 454-455  
  Keywords Ge, exciton photoconduction  
  Abstract  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1715  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. url  openurl
  Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 50 Issue (up) 4 Pages 728-734  
  Keywords Ge, photoexcited carriers, shallow impurity centers  
  Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1720  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Observation of free carrier resonances in p-type germanium at submillimeter wavelengths Type Journal Article
  Year 1978 Publication Sov. Phys. Solid State Abbreviated Journal Sov. Phys. Solid State  
  Volume 20 Issue (up) 4 Pages 573-579  
  Keywords p-Ge, free carriers, resonances  
  Abstract The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1721  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
  Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue (up) 4 Pages 769-776  
  Keywords p-Ge, photoconductivity, energy spectrum, magnetic field  
  Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.  
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  Notes Approved no  
  Call Number Serial 1727  
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue (up) 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1773  
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Author Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. doi  openurl
  Title Hot-electron superconducting mixers for 20-500 GHz operation Type Conference Article
  Year 1994 Publication Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. Abbreviated Journal  
  Volume 2250 Issue (up) 4D Pages 276-278  
  Keywords  
  Abstract Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.  
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  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 981  
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Author Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. openurl 
  Title Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films Type Journal Article
  Year 1995 Publication JETP Abbreviated Journal JETP  
  Volume 80 Issue (up) 5 Pages 960-964  
  Keywords  
  Abstract The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.  
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  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 989  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue (up) 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 0021-3640 ISBN Medium  
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  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. url  openurl
  Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
  Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics  
  Volume 41 Issue (up) 5 Pages 408-414  
  Keywords submillimeter waves, transmission  
  Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.  
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  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
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  Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no  
  Call Number Serial 1611  
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Author Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. url  doi
openurl 
  Title A fast infrared detector based on patterned YBCO thin film Type Journal Article
  Year 1994 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 7 Issue (up) 5 Pages 321-323  
  Keywords YBCO HTS detector  
  Abstract Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.  
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  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1646  
Permanent link to this record
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