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| Author | Yao, Xing-Can; Wang, Tian-Xiong; Xu, Ping; Lu, He; Pan, Ge-Sheng; Bao, Xiao-Hui; Peng, Cheng-Zhi; Lu, Chao-Yang; Chen, Yu-Ao; Pan, Jian-Wei | ||||
| Title | Observation of eight-photon entanglement | Type | Journal Article | ||
| Year | 2012 | Publication | Nature Photonics | Abbreviated Journal | Nat. Photon. |
| Volume | 6 | Issue  |
4 | Pages | 225-228 |
| Keywords | fromIPMRAS | ||||
| Abstract | The creation of increasingly large multipartite entangled states is not only a fundamental scientific endeavour in itself, but is also the enabling technology for quantum information. Tremendous experimental effort has been devoted to generating multiparticle entanglement with a growing number of qubits. So far, up to six spatially separated single photons have been entangled based on parametric downconversion. Multiple degrees of freedom of a single photon have been exploited to generate forms of hyper-entangled states. Here, using new ultra-bright sources of entangled photon pairs, an eight-photon interferometer and post-selection detection, we demonstrate for the first time the creation of an eight-photon Schrödinger cat state with genuine multipartite entanglement. The ability to control eight individual photons represents a step towards optical quantum computation, and will enable new experiments on, for example, quantum simulation, topological error correction and testing entanglement dynamics under decoherence. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 784 | ||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue |
4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W. | ||||
| Title | Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors | Type | Journal Article | ||
| Year | 2014 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 116 | Issue |
4 | Pages | 043906 (1 to 9) |
| Keywords | NbN SSPD, SNSPD, TaN | ||||
| Abstract | A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1357 | |||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue |
4 | Pages | 1-5 |
| Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1324 | |||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Photon absorption near the gap frequency in a hot electron bolometer | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue |
4 | Pages | 1-4 |
| Keywords | NBN HEB mixer | ||||
| Abstract | The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1331 | |||
| Permanent link to this record | |||||