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Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
isbn  openurl
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication IRMMW-THz Abbreviated Journal  
  Volume Issue (down) Pages  
  Keywords Ag2S quantum dots  
  Abstract A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2162-2035 ISBN 978-1-5386-8285-2 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 8874267 Serial 1286  
Permanent link to this record
 
 
Author Goltsman, G. url  openurl
  Title Quantum-photonic integrated circuits Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue (down) Pages 22-23  
  Keywords WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector  
  Abstract We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1287  
Permanent link to this record
 
 
Author Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Towards the fiber-optic Kennedy quantum receiver Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue (down) Pages 03011 (1 to 2)  
  Keywords SSPD, SNSPD, Kennedy quantum receiver  
  Abstract We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1288  
Permanent link to this record
 
 
Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. url  doi
openurl 
  Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue (down) Pages 051054  
  Keywords field-effect transistor, FET, monolayer graphene, graphene nanoribbons  
  Abstract We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1300  
Permanent link to this record
 
 
Author Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. url  doi
openurl 
  Title Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue (down) Pages 051050 (1 to 5)  
  Keywords field-effect transistor, FET, carbon nanotube, CNT  
  Abstract In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1301  
Permanent link to this record
 
 
Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. url  doi
openurl 
  Title Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1092 Issue (down) Pages 012039 (1 to 4)  
  Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1302  
Permanent link to this record
 
 
Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. url  doi
openurl 
  Title Graphene-based lateral Schottky diodes for detecting terahertz radiation Type Conference Article
  Year 2018 Publication Proc. Optical Sensing and Detection V Abbreviated Journal Proc. Optical Sensing and Detection V  
  Volume 10680 Issue (down) Pages 30-39  
  Keywords graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Berghmans, F.; Mignani, A.G.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 10.1117/12.2307020 Serial 1306  
Permanent link to this record
 
 
Author Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. url  openurl
  Title Optical single photon detection in micron-scaled NbN bridges Type Miscellaneous
  Year 2018 Publication arXiv Abbreviated Journal  
  Volume Issue (down) Pages  
  Keywords SSPD  
  Abstract We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation.  
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  Area Expedition Conference  
  Notes Duplicated as 1303 Approved no  
  Call Number Serial 1312  
Permanent link to this record
 
 
Author Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. url  openurl
  Title About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers Type Abstract
  Year 2018 Publication Proc. 29th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 29th Int. Symp. Space Terahertz Technol.  
  Volume Issue (down) Pages 113  
  Keywords NbN HEB mixer  
  Abstract Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.  
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  Notes Approved no  
  Call Number Serial 1313  
Permanent link to this record
 
 
Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. url  doi
openurl 
  Title Response of carbon nanotube film transistor to the THz radiation Type Conference Article
  Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 195 Issue (down) Pages 05012 (1 to 2)  
  Keywords field-effect transistor, FET, carbon nanotube, CNT  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1317  
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