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Tong, C. Edward; Trifonov, Andrey; Blundell, Raymond; Shurakov, Alexander; Gol’tsman, Gregory |
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A digital terahertz power meter based on an NbN thin film |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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170 |
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waveguide NbN HEB mixers |
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We have further studied the effect of subjecting a superconducting Hot Electron Bolometer (HEB) element made from an NbN thin film to microwave radiation. Since the photon energy is weak, the microwave radiation does not simply heat the film, but generates a bi-static state, switching between the superconducting and normal states, upon the application of a small voltage bias. Indeed, a relaxation oscillation of a few MHz has previously been reported in this regime [1]. Switching between the superconducting and normal states modulates the reflected microwave pump power from the device. A simple homodyne setup readily recovers the spontaneous switching waveform in the time domain. The switching frequency is a function of both the bias voltage (DC heating) and the applied microwave power. In this work, we use a 0.8 THz HEB waveguide mixer for the purpose of demonstration. The applied microwave pump, coupled through a directional coupler, is at 1 GHz. Since the pump power is of the order of a few μW, a room temperature amplifier is sufficient to amplify the reflected pump power from the HEB mixer, which beats with the microwave source in a homodyne set-up. After further amplification, the switching waveform is passed onto a frequency counter. The typical frequency of the switching pulses is 3-5 MHz. It is found that the digital frequency count increases with higher microwave pump power. When the HEB mixer is subjected to additional optical power at 0.8 THz, the frequency count also increases. When we vary the incident optical power by using a wire grid attenuator, a linear relationship is observed between the frequency count and the applied optical power, over at least an order of magnitude of power. This phenomenon can be exploited to develop a digital power meter, using a very simple electronics setup. Further experiments are under way to determine the range of linearity and the accuracy of calibration transfer from the microwave to the THz regime. References 1. Y. Zhuang, and S. Yngvesson, “Detection and interpretation of bistatic effects in NbN HEB devices,” Proc. 13 th Int. Symp. Space THz Tech., 2002, pp. 463–472. |
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1366 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Paveliev, D. G. |
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Heterodyne source of THz range based on semiconductor superlattice multiplier |
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2011 |
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IRMMW-THz |
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IRMMW-THz |
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1-2 |
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NbN HEB mixer, superlattice |
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We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state. |
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6105209 |
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1384 |
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Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Superconducting single photon detector integrated with optical cavity |
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2011 |
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Proc. MLPLIT |
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Proc. MLPLIT |
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143-145 |
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NbN SSPD, cavity |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1385 |
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Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Noise equivalent power and dynamic range of NBN hot-electron bolometers |
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2011 |
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Proc. MLPLIT |
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Proc. MLPLIT |
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146-148 |
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NbN HEB |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1386 |
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Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
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Spectral sensitivity of narrow strip NbN superconducting single-photon detector |
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2011 |
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Proc. SPIE |
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Proc. SPIE |
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8072 |
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80720G (1 to 9) |
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NbN SSPD, SNSPD |
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Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs. |
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SPIE |
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Fiurásek, J.; Prochazka, I. |
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Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III |
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1387 |
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