Author |
Title |
Year |
Publication |
Volume |
Pages |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
1976 |
JETP Lett. |
24 |
125-128 |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Energy spectrum of free excitons in germanium |
1973 |
JETP Lett. |
18 |
93 |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Observation of the free-exciton spectrum at submillimeter wavelengths |
1972 |
JETP Lett. |
16 |
161-162 |
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
22 |
95-97 |
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
1995 |
JETP |
80 |
960-964 |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
1996 |
J. of Communications Technology and Electronics |
41 |
408-414 |