| Records |
| Author |
Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. |
| Title |
Superconducting nanowire photon number resolving detector at telecom wavelength |
Type |
Conference Article |
| Year |
2008 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
| Volume |
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Issue  |
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Pages |
Qmj1 (1 to 2) |
| Keywords |
PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers |
| Abstract |
We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
Optical Society of America |
Place of Publication |
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Editor |
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Summary Language |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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Series Issue |
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Edition |
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| ISSN |
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ISBN |
978-1-55752-859-9 |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
Marsili:08 |
Serial |
1243 |
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| Author |
Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G. |
| Title |
Superconducting photon number resolving counter for near infrared applications |
Type |
Conference Article |
| Year |
2008 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
7138 |
Issue |
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Pages |
713828 (1 to 5) |
| Keywords |
PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared |
| Abstract |
We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate. |
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Thesis |
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| Publisher |
Spie |
Place of Publication |
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Editor |
Tománek, P.; Senderáková, D.; Hrabovský, M. |
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Summary Language |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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Edition |
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ISBN |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
10.1117/12.818079 |
Serial |
1241 |
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| Author |
Minaeva, O.; Fraine, A.; Korneev, A.; Divochiy, A.; Goltsman, G.; Sergienko, A. |
| Title |
High resolution optical time-domain reflectometry using superconducting single-photon detectors |
Type |
Conference Article |
| Year |
2012 |
Publication |
Frontiers in Opt. 2012/Laser Sci. XXVIII |
Abbreviated Journal |
Frontiers in Opt. 2012/Laser Sci. XXVIII |
| Volume |
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Issue |
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Pages |
Fw3a.39 |
| Keywords |
SSPD, SNSPD, Photodetectors; Fiber characterization; Light beams; Optical time domain reflectometry; Photon counting; Single mode fibers; Single photon detectors; Superconductors |
| Abstract |
We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs. |
| Address |
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Thesis |
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| Publisher |
Optical Society of America |
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Series Title |
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Expedition |
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Approved |
no |
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Serial |
1237 |
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| Author |
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012156 |
| Keywords |
Shottky diode, THz, direct detector, multipixel camera |
| Abstract |
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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Series Issue |
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Edition |
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| ISSN |
1742-6588 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1153 |
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| Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
| Volume |
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Issue |
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Pages |
369-371 |
| Keywords |
silicon detector, quantum dot, IR, surface states |
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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Series Issue |
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Edition |
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ISBN |
978-5-89513-451-1 |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1154 |
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