| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
| Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
16 |
Issue  |
4 |
Pages |
161-162 |
| Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
| Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
50 |
Issue |
4 |
Pages |
728-734 |
| Keywords |
Ge, photoexcited carriers, shallow impurity centers |
| Abstract |
Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
| Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
Type |
Journal Article |
| Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
45 |
Issue |
4 |
Pages |
769-776 |
| Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
| Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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1727 |
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| Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
| Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
| Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
22 |
Issue |
4 |
Pages |
95-97 |
| Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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| Author |
Andreev, A. F. |
| Title |
The thermal conductivity of the intermediate state in superconductors |
Type |
Journal Article |
| Year |
1964 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
19 |
Issue |
5 |
Pages |
1228-1231 |
| Keywords |
superconductors, intermediate state, thermal conductivity |
| Abstract |
It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path. |
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MSPU @ s @ Andreev_reflection |
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216 |
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