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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
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Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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Journal Article |
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Year |
1997 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
56 |
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16 |
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10089-10096 |
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disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. |
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Title |
Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
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Journal Article |
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2013 |
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Phys. Rev. B |
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88 |
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18 |
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180505 (1 to 5) |
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strongly disordered superconducting TiN films, microwave resonators |
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We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties. |
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1069 |
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Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N. |
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Title |
Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films |
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Journal Article |
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2018 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
97 |
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18 |
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184512 (1 to 13) |
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WSi films, diffusion constant, SSPD, SNSPD |
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We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques. |
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1305 |
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Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C. |
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Title |
Optical control of photon tunneling through an array of nanometer-scale cylindrical channels |
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Journal Article |
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Year |
2002 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
66 |
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20 |
Pages |
205414_1-205414_5 |
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optical mixing |
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1098-0121 |
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499 |
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Peltonen, J. T.; Astafiev, O. V.; Korneeva, Y. P.; Voronov, B. M.; Korneev, A. A.; Charaev, I. M.; Semenov, A. V.; Golt'sman, G. N.; Ioffe, L. B.; Klapwijk, T. M.; Tsai, J. S. |
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Title |
Coherent flux tunneling through NbN nanowires |
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Journal Article |
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2013 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
88 |
Issue |
22 |
Pages |
220506 (1 to 5) |
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NbN nanowires |
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We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting loop with the nanowire acting as an effective tunnel barrier for the magnetic flux, and reproducibly observed in different wires. The flux superposition achieved in the fully metallic NbN rings proves the universality of the phenomenon previously reported for InOx. We perform microwave spectroscopy and study the tunneling amplitude as a function of the wire width, compare the experimental results with theories, and estimate the parameters for existing theoretical models. |
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1098-0121 |
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1369 |
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Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
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Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
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Journal Article |
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1998 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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57 |
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24 |
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15623-15628 |
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NbC films |
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A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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0163-1829 |
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1585 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Title |
Electron energy relaxation in disordered superconducting NbN films |
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Journal Article |
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2020 |
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Phys. Rev. B |
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Phys. Rev. B |
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102 |
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5 |
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054501 (1 to 15) |
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NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Relaxation of the resistive superconducting state in boron-doped diamond films |
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2016 |
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Phys. Rev. B |
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Phys. Rev. B |
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93 |
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6 |
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064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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1167 |
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Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. |
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Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields |
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2020 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
101 |
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6 |
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060508 (1 to 6) |
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MoSi, WSi films |
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We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. |
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1800 |
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Santhanam, P.; Wind, S.; Prober, D. E. |
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Localization, superconducting fluctuations, and superconductivity in thin films and narrow wires of aluminum |
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1987 |
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Phys. Rev. B |
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Phys. Rev. B |
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35 |
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7 |
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3188-3206 |
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Al films; electron-phonon scattering; electron-electron scattering; Disordered structures; amorphous and glassy solids, Relaxation times and mean free paths, Galvanomagnetic and other magnetotransport effects |
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We report a comprehensive set of experiments on wide and narrow thin-film strips of aluminum which test the predictions of recent localization theory. The experiments on wide films in the two-dimensional regime confirm the theoretical predictions and also yield insight into inelastic mechanisms and spin-orbit scattering rates. Our extension of the existing theory for one-dimensional systems to include spin-orbit scattering and Maki-Thompson superconducting fluctuations is verified by the experiments. We find clear evidence for one-dimensional localization, with inferred inelastic rates identical to those in two-dimensional films. The prediction of the localization theory for a dimensional crossover from two-dimensional to one-dimensional behavior is also confirmed. We have reanalyzed the results of some previous experiments on thin films and narrow wires in light of these results. |
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RPLAB @ gujma @ |
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