| Records |
| Author |
Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
| Title |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. PIERS |
Abbreviated Journal |
Proc. PIERS |
| Volume |
1 |
Issue  |
5 |
Pages |
587-590 |
| Keywords |
NbN HEB mixers |
| Abstract |
In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. |
| Address |
Hangzhou, China |
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| ISSN |
1931-7360 |
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Progress In Electromagnetics Research Symposium |
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no |
| Call Number |
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Serial |
1482 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
| Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
Type |
Journal Article |
| Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
33 |
Issue |
5 |
Pages |
551-554 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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Edition |
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| ISSN |
1063-7826 |
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no |
| Call Number |
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Serial |
1571 |
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| Author |
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. |
| Title |
Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light |
Type |
Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
5 |
Pages |
955-960 |
| Keywords |
NbN HEB detectors |
| Abstract |
Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect. |
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Russian |
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Edition |
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| ISSN |
0131-5366 |
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no |
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Serial |
1670 |
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| Author |
Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
| Title |
The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
Type |
Journal Article |
| Year |
2016 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
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| Volume |
42 |
Issue |
6 |
Pages |
563-566 |
| Keywords |
HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection |
| Abstract |
Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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no |
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Serial |
1106 |
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| Author |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
| Title |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
Type |
Journal Article |
| Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
91 |
Issue |
6 |
Pages |
062504 (1 to 3) |
| Keywords |
NbN films, nanofilms |
| Abstract |
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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| ISSN |
0003-6951 |
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no |
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Serial |
1425 |
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| Author |
Zhang, Wen; Li, Ning; Jiang, Ling; Miao, Wei; Lin, Zhen-Hui; Yao, Qi-Jun; Shi, Sheng-Cai; Chen, Jian; Wu, Pei-Heng; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Noise behaviour of a THz superconducting hot-electron bolometer mixer |
Type |
Journal Article |
| Year |
2007 |
Publication |
Chinese Phys. Lett. |
Abbreviated Journal |
Chinese Phys. Lett. |
| Volume |
24 |
Issue |
6 |
Pages |
1778-1781 |
| Keywords |
NbN HEB mixers |
| Abstract |
A quasi-optical superconducting NbN hot-electron bolometer (HEB) mixer is measured in the frequency range of 0.5–2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasi-optical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency. |
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| ISSN |
0256-307X |
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no |
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Serial |
1430 |
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| Author |
Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
| Title |
Stability of heterodyne terahertz receivers |
Type |
Journal Article |
| Year |
2006 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
100 |
Issue |
6 |
Pages |
064904 (1 to 9) |
| Keywords |
NbN HEB mixers |
| Abstract |
In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies. |
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| ISSN |
0021-8979 |
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no |
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Serial |
1444 |
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| Author |
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
| Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
| Volume |
48 |
Issue |
6 |
Pages |
671-675 |
| Keywords |
NbN HEB mixers |
| Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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| Notes |
https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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no |
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Vakhtomin2003 |
Serial |
1522 |
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| Author |
Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
| Title |
Picosecond superconducting single-photon optical detector |
Type |
Journal Article |
| Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
79 |
Issue |
6 |
Pages |
705-707 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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| ISSN |
0003-6951 |
ISBN |
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no |
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Serial |
1543 |
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| Author |
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
| Title |
Superconductive properties of ultrathin NbN films on different substrates |
Type |
Journal Article |
| Year |
1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
7 |
Issue |
6 |
Pages |
1097-1102 |
| Keywords |
NbN films |
| Abstract |
A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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0131-5366 |
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| Notes |
Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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no |
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1631 |
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