|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. |
Membrane-based HEB mixer for THz applications |
2003 |
Proc. SPIE |
5116 |
551-562 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
55-58 |
|
|
Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
Hot electron mixers for THz applications |
1996 |
Proc. 30th ESLAB |
|
207-210 |
|
|
Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S. |
Hot electron mixers, the potential competition |
1992 |
Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
|
201-206 |
|
|
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
|